IEC 63068-3-2020 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

IEC 63068-2-2019 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection IEC 63068-1-2019 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects IEC 63067-2020 Electrical installations for lighting and beaconing of aerodromes - Connecting devices - General requirements and tests IEC 63068-4-2022 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and IEC 63073-1-2020 Dedicated radionuclide imaging devices - Characteristics and test conditions - Part 1: Cardiac SPECT IEC 63075-2019 Superconducting ac power cables and their accessories for rated voltages from 6 kV to 500 kV – Test methods and requirements